CHARACTERIZING IMD Characterizing Intermodulation Distortion of High - Power Devices

نویسنده

  • Ibrahim Khalil
چکیده

Modern wireless communication systems demand for high power and broadband devices. There are different technologies emerging offering more and more power density, with single devices delivering power levels above 100 watts. These devices are targeted for broadband telecommunications like W-CDMA or Wi-Fi application. Intermodulation distortion is very critical in these applications because it generates crosstalk and requires costly linearization techniques. Therefore, it is necessary to characterize the devices for their linearity very accurately. A classical approach is to measure IP3. Because of the high power levels, however, this is not straightforward and requires a dedicated test setup. This is presented here, along with some tips and tricks to measure such devices.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of Low Frequency Memory on High Power 12W LDMOS Transistors Intermodulation Distortion

The increasing demand for higher data rates in wireless communication systems has led to the more effective and efficient use of all allocated frequency bands. In order to use the whole bandwidth at maximum efficiency, one needs to have RF power amplifiers with a higher linear level and memory-less performance. This is considered to be a major challenge to circuit designers. In this thesis the ...

متن کامل

Prediction of IMD in LDMOS Transistor Amplifiers Using a New Large-Signal Model

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this k...

متن کامل

Large- and Small-Signal IMD Behavior of Microwave Power Amplifiers

In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis. The variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated. This nonlinear distortion model enabled the design of power amplifiers specially tailored to present a desired...

متن کامل

Improving Linearity of CMOS Variable-gain Amplifier Using Third-order Intermodulation Cancellation Mechanism and Intermodulation Distortion Sinking Techniques

This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The lineari­ty improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodul­ation (­IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...

متن کامل

Performance of Coded Multicarrier Multiple Transmit Antenna DS-CDMA Systems in the Presence of Power Amplifier Nonlinearity

Absfmcl-Mile a multicarrier approach of achieving frequency diversity performs well in the presence of jamming, it suffers from the eNeeets of intermodulation distortion (IMD) due to power amplifier (PA) nonlinearity. On the other hand, transmit diversity using multiple transmit antennas tias the benefit of no IMD effccts, but suffers from a larger performance degradation due to jamming compare...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007